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Test circuit for inductive load switching and datasheeet recovery times Figure Safe operating area for TO Figure 3. Pulse width limited by safe operating area 2. Body Diode Reverse Recovery Charge. Download datasheet Kb Share this page. Pulsed Drain Current a. Continuous Source-Drain Diode Current. Repetitive Avalanche Current a. The TOAB package is universally preferred for all. Vishay Intertechnology Electronic Components Datasheet.
Popular transistors. L S die contact. Single Pulse Avalanche Energy b. Prev Next General features. Pulsed Diode Forward Current a. N-channel V — 0. The low thermal resistance.
Soldering Recommendations Peak Temperature. IRF datasheet and specification datasheet Download datasheet. These packages have a Lead-free second level interconnect. Normalized gate threshold voltage vs temperature Electrical characteristics Figure 8. Unclamped inductive waveform Figure The maximum ratings related to soldering conditions are also marked on the inner box label.
V DS Temperature Coefficient. This datasheet is subject to change without notice. Repetitive rating; pulse width limited by maximum junction temperature see fig. Drain-Source Body Diode Characteristics. The low thermal resistance and low package cost of the TOAB contribute irf its wide acceptance throughout the industry. The TOAB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. Case-to-Sink, Flat, Greased Surface. Operating Junction and Storage Temperature Range.
Copy your embed code and put on your site: I SM p — n junction diode. Elcodis is a trademark of Elcodis Company Ltd. Contents Contents 1 Electrical ratings. IRF datasheet and specification datasheet. All other trademarks are the property of their respective owners. TOP Related Posts.
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